DIODES INC. Bipolar (BJT) Single Transistor, NPN, E-Line, Through Hole - 60 5 1.2

The DIODES INC. Bipolar (BJT) Single Transistor is a high-performance NPN silicon planar transistor designed for medium power applications. Engineered for reliability and efficiency, this through-hole transistor delivers excellent electrical characteristics, making it an ideal choice for a wide range of electronic circuits.

Featuring a high DC current gain and very low saturation voltage, this transistor ensures efficient switching and amplification, minimising power loss in your designs. Its robust E-Line package and through-hole mounting provide mechanical stability and ease of soldering, making it perfect for both prototyping and production runs.

With a collector-emitter voltage rating of 45V and a continuous collector current of 2A, this component is well-suited for demanding applications. The transistor can dissipate up to 1W of power, ensuring reliable operation under load. Its high transition frequency of 150MHz allows for use in high-speed switching circuits.

The DIODES INC. Bipolar (BJT) Single Transistor is particularly recommended for use in siren drivers and battery-powered circuits, where its high gain and low saturation voltage are invaluable. It also serves as an excellent replacement for Darlington transistors, simplifying circuit design and reducing component count.

Whether you are a hobbyist, engineer, or manufacturer, this NPN transistor offers the performance and dependability required for your electronic projects. Its MSL 1 – Unlimited moisture sensitivity level ensures long shelf life and ease of handling, while its compact E-Line package fits easily into your PCB layout.

Applications

• Industrial control circuits
• Siren drivers
• Battery-powered devices
• Darlington replacement in various circuits

Key Features

• High gain (400) at IC = 1A
• Very low saturation voltage
• High transition frequency (150MHz)
• RoHS

Variant Details

• Size: 60 5 1.2