INFINEON Power MOSFET, N Channel, 9000 µohm, TO-220AB, Through Hole - 100 97

The INFINEON Power MOSFET is a high-performance semiconductor component, engineered for demanding electronic applications. Utilising advanced Trench MOSFET technology, it provides extremely low on-resistance per silicon area, maximising power efficiency and minimising heat generation.

This N-channel device offers exceptionally fast switching performance, making it suitable for high-frequency and hard-switched circuits. It is designed with improved gate, avalanche, and dynamic dv/dt ruggedness, ensuring reliable operation under stressful conditions. Key features include fully characterised capacitance and avalanche safe operating area (SOA), as well as an enhanced body diode with superior dV/dt and dI/dt capability.

Primary Applications

This MOSFET is an excellent choice for modern power management systems. Its low on-resistance and fast switching characteristics make it ideal for high-efficiency synchronous rectification in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). It is also perfectly suited for high-speed power switching applications, contributing to more compact and efficient electronic designs.

Key Specifications & Features

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 75 V
• Continuous Drain Current (Id): 80 A
• Drain-Source On-State Resistance (Rds(on)): 9000 µohm
• Transistor Package: TO-220AB
• Mounting Type: Through Hole
• Power Dissipation: 140 W
• Operating Temperature Max: 175°C
• Number of Pins: 3

Housed in the industry-standard TO-220AB package, this component is designed for robust through-hole mounting, offering a secure mechanical and electrical connection. This INFINEON MOSFET provides a reliable, high-efficiency solution for engineers and designers looking to optimise power conversion and switching performance in their electronic circu

Variant Details

• Size: 100 97