ONSEMI - Bipolar (BJT) Single Transistor, PNP, -500mA, 225mW, SOT-23 - -80V

The ONSEMI MMBT5401LT1G is a PNP high-voltage bipolar junction transistor, engineered for general-purpose switching applications. This surface-mount device is housed in a compact SOT-23 package, optimised for lower power dissipation in space-constrained circuit designs. With a collector-emitter voltage rating of -150V and a continuous collector current of -500mA, it delivers reliable performance in a variety of industrial, power management, and automotive applications.

This transistor meets the stringent requirements of AEC-Q101 qualification, ensuring robust reliability for automotive environments, and is PPAP capable, making it suitable for high-volume production. The halogen-free construction aligns with modern environmental standards, while the surface-mount SOT-23 footprint facilitates automated assembly and efficient use of PCB space.

Key Features:

• PNP polarity for complementing NPN transistor circuits
• -150V collector-emitter voltage (V(br)ceo) for high-voltage switching
• -500mA continuous collector current for moderate power loads
• 225mW power dissipation for low-power surface-mount applications
• 300MHz transition frequency for high-speed switching
• AEC-Q101 qualified and PPAP capable for automotive and industrial use
• Halogen-free construction (environmentally friendly)

The ONSEMI MMBT5401LT1G is designed for engineers seeking a dependable, high-voltage transistor in a compact, industry-standard package. Its combination of high voltage capability, moderate current handling, and fast switching speed makes it a versatile choice for a wide range of electronic circuits.

Variant Details

• Size: -80V