BD241C NPN Power Transistor, 100V, 5A, TO-220 Package

The BD241C from STMicroelectronics is a high-performance silicon NPN complementary power transistor designed for robust and reliable operation in demanding applications. Manufactured using planar technology with a base island layout, this component delivers exceptional high gain alongside a very low saturation voltage, contributing to excellent efficiency.

A key benefit is its fast switching capability, which, combined with the low saturation voltage, results in significantly reduced switching and conduction losses. This makes it a highly efficient choice for power control circuits. The transistor features a well-controlled hFE parameter, enhancing long-term stability and operational reliability in your designs.

Electrical Specifications

_ Collector-base voltage (V_CBO): 100 V _ Emitter-base voltage (V_EBO): 5 V _ Collector-emitter voltage max.: 100 V _ Continuous collector current: 5 A _ Power dissipation: 40 W _ DC current gain (h_FE) min.: 25 _ Operating temperature max.: 150°C _ No. of pins: 3 _ Transistor case style: TO-220 _ Transistor mounting: Through hole

Housed in the industry-standard TO-220 package, it is designed for straightforward through-hole mounting, offering good thermal performance for heat dissipation. With its balanced characteristics, the BD241C is a versatile and dependable component for a wide range of electronic projects, from audio amplification to industrial control systems.